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mbm29bs/bt64lf -18/25 mbm29bs/bt64lf -18/25 cover sheet data sheet (retired product) this product has been retired and is not recommended for new designs . availability of this document is retained for reference and historical purposes only. continuity of specifications there is no change to this data sheet as a result of offering the device as a spansi on product. any changes that have been made are the result of normal data sheet improvem ent and are noted in the document revision summary. for more information please contact your local sales office for additional information about spansion memory solutions. publication number mbm29bs/bt64lf revision ds05-20916-2e issue date august 2, 2007
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september 2003 this document specifies spansion memory products that are now offered by both advanced micro devices and fujitsu. although the document is marked with the name of the company that originally developed the specification, these products will be offered to cu stomers of both amd and fujitsu. continuity of specifications there is no change to this datasheet as a result of offering the device as a spansion product. future routine revisions will occur when appropriate, and ch anges will be noted in a revision summary. continuity of ordering part numbers amd and fujitsu continue to support existing part numbers beginning with "am" and "mbm". to order these products, please use only the ordering part numbers listed in this document. for more information please contact your local amd or fujitsu sales office for additional information about spansion memory solutions. tm tm tm spansion flash memory data sheet tm
ds05-20916-2e fujitsu semiconductor data sheet retired product y ds05-20916-2e_august 2, 2007 burst mode flash memory cmos 64m (4m 16) bit mbm29bs/bt64lf- 18/25 general description the mbm29bs/bt64lf is a 64m bit, 1.8 volt-only, burst mode and dual operation flash memory organized as 4m words of 16 bits each. the device offered in a 60-ball fbga package. this device is designed to be programmed in-system with the standard system 1.8 v v cc supply. (continued) product line up pac k ag e part no. mbm29bs/ bt64lf-25 mbm29bt64lf-18 mbm29bs64lf-18 v cc 1.8 v 1.8 v 1.8 v v ccq 1.8 v/3.0 v 3.0 v 1.8 v clock rate 40 mhz ( ? 25) 54 mhz ( ? 18) 54 mhz ( ? 18) synchronous/burst max latency time (ns) 120 106.5 106 max burst access time (ns) 20 14 13.5 max oe access time (ns) 20 14 13.5 asynchronous max address access time (ns) 70 70 70 max ce access time (ns) 70 70 70 max oe access time (ns) 20.5 20 20 +0.15 v ?0.15 v +0.15 v ?0.15 v +0.15 v ?0.15 v +0.15 v ?0.30 v +0.15 v ?0.15 v 60-ball plastic fbga (bga-60p-m05)
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 5 (continued) the device supports enhanced v ccq to offer up to 3 v compatible inputs and outputs(mbm29bs64lf:1.8v v ccq , mbm29bt64lf:3.0 v v ccq ). 12.0 v v pp and 5.0 v v cc are not required for write or erase operations. the device can also be programmed in standard eprom programmers. the device provides truly high performance non-volatile memory solution. the device offers fast burst access frequency of 54 mhz with initial access times of 106 ns, allowing operation of high-speed microprocessors without wait states. to eliminate bus connection the device has separate chip enable (ce ), write enable (we ), address valid (avd ) and output enable (oe ) controls. for burst operations, the device additionally requires ready (rdy), and clock (clk). this implementation allows easy interface with minimal glue logic to a wide range of microprocessors/ microcontrollers for high pe rformance read operations. the burst read mode feature gives system designers flexibility in the interface to the device. the user can preset the burst length and wrap through the same memory space. at 54 mhz, the device provides a burst access of 13.5 ns with a latency of 106 ns at 30 pf. the dual operation function provides simultaneous operation by dividing the memory space into four banks. the device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another ba nk, with zero latency. this releases the system from waiting for the completion of program or erase operations. the device is command set compatible with jedec standard e 2 proms. commands are written to the command register using standard microprocessor write timing. register contents serve as inputs to an internal state- machine which controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from 5.0 v and 12.0 v flash or eprom devices. the device is programmed by executing the prog ram command sequence. this will invoke the embedded program algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margins. typically, each 32k words sector can be programmed and verified in about 0.3 second. erase is accomplished by executing the erase comm and sequence. this will invoke the embedded erase algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. during erase, th e device automatically times the erase pulse widths and verifies proper cell margins. any individual sector is typically erased and verified in 0.2 second. (if already preprogrammed.) the device also features a sector erase architecture. the sector mode allows each sector to be erased and reprogrammed without affecting other sectors. the device is erased when shipped from the factory. the enhanced v i/o (v ccq ) feature allows the output voltage generated on the device to be determined based on the v i/o level. this feature allows this device to operate in the 1.8 v and 3.0 v i/o environment, driving and receiving signals to and from other 1.8 v and 3.0 v devices on the same bus. the device features single 1.8 v power supply operation for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. a low v cc detector automatically inhibits write operations on the loss of power. the end of program or erase is detected by data polling of dq 7 , by the toggle bit feature on dq 6 , output pin. once the en d of a program or erase cycl e has been comleted, the device internally resets to the read mode. fujitsu?s flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliabilit y and cost effectiveness. the device elec trically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is programmed using hot electron injection.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 6 features ?0.17 m process technology single 1.8 volt read, program and erase (1.65 v to 1.95 v) simultaneous read/write operation (dual bank) all sectors being protected upon power-up the device aims for high-speed read of stored codes, thus to fully prevent it from much anticipated wrong operational procedures, programming and erasure, it adopts all-sectors lock for ultimate all sector protection by default upon power-up. flexbank tm * 1 bank a: 16m bit (8k words 4 and 32k words 31) bank b: 16m bit (32k words 32) bank c: 16m bit (32k words 32) bank d: 16m bit (8k words 4 and 32k words 31) enhanced i/o tm * 2 (v ccq ) feature input/ output voltage generated on the device is determined based on the v i/o level (mbm29bs64lf: 1.8 v v ccq and mbm29bt64lf: 3.0 v v ccq ) high performance burst frequency reach at 54 mhz burst access times of 13.5 ns @ 30 pf at industrial temperature range asynchronous random access times of 70 ns (at 30 pf) synchronous latency of 106 ns with 1.8 v v ccq , and 106.5 ns with 3.0 v v ccq (at 30 pf) programmable burst read interface linear burst: 8, 16, and 32 words with wrap-around compatible with jedec-standard commands uses same software commands as e 2 proms minimum 100,000 program/erase cycles sector erase architecture eight 8k words, a hundred-six 32k words sectors. any combination of sectors can be concurrently erased. also supports full chip erase. write protect pin (wp ) at v il , allows protection of ?outermost? 2 8k words on low end of boot sectors(sa0 and sa1), regardless of sector protection/unprotection status accelerate pin (acc) at v acc , increases program performance. at v il , hardware protect method to lock all sectors. embedded erase tm * 2 algorithms automatically preprograms and erases the chip or any sector embedded program tm * 2 algorithms automatically writes and verifies data at specified address data polling and toggle bit feature for detection of program or erase cycle completion automatic sleep mode when address remain stable, the device automatically switches itself to low power mode erase suspend/resume suspends the erase operation to allow a read data and/or program in another sector within the same device in accordance with cfi (common flash interface) hardware reset pin (reset ) hardware method to reset the device for reading array data to avoid initiation of a write c ycle during vcc power-up/down, reset must be v il for defined time. (continued)
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 7 (continued) protection software command sector locking wp protects the outermost two boot sectors(sa0 and sa1) acc protects all sector at v il . should be at v ih for all other conditions. cmos compatible inputs, cmos compatible outputs *1: flexbank tm is a trademark of fujitsu limited, japan. *2: embedded erase tm , embedded program tm and enhanced v i/o tm are trademarks of advanced micro devices, inc. pin assignment (bga-60p-m05) fbga (top view) marking side n.c. a 13 a 9 v cc v ssq a 3 n.c. v ccq v ssq n.c. n.c. b8 c8 d8 e8 f8 g8 a 12 a 14 a 15 a 16 n.c. dq 15 v ss a7 b7 c7 d7 e7 f7 g7 h7 a 8 a 10 a 11 dq 7 dq 14 dq 13 dq 6 a6 b6 c6 d6 e6 f6 g6 h6 we reset a 21 dq 12 v cc dq 4 a5 b5 c5 f5 g5 h5 dq 10 a 18 rdy acc dq 11 dq 3 b4 c4 a4 f4 g4 h4 a 7 a 4 a 17 a 6 a 5 dq 0 dq 8 dq 9 dq 1 a3 b3 c3 d3 e3 f3 g3 h3 a 2 a 1 a 0 ce oe v ss a2 b2 c2 d2 e2 f2 g2 h2 clk wp avd v ccq b1 g1 c1 d1 e1 f1 a 19 dq 5 d5 a 20 dq 2 d4 e5 e4 index
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 8 pin descriptions pin function a 21 to a 0 address inputs dq 15 to dq 0 data inputs/outputs clk clk input ce chip enable oe output enable we write enable avd address valid input rdy ready output reset hardware reset wp hardware write protection acc program acceleration n.c. pin not connected internally v ss device ground v cc device power supply v ssq input & output buffer ground v ccq input & output buffer power supply
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 9 block diagram logic symbol v cc a 21 to a 0 reset we ce oe wp avd dq 15 to dq 0 bank a address bank c address bank b address bank d address state control & command register status rdy control cell matrix 16 mbit (bank a) x-decoder y-gating cell matrix 16 mbit (bank d) x-decoder y-gating cell matrix 16 mbit (bank b) x-decoder y-gating cell matrix 16 mbit (bank c) x-decoder y-gating v ssq v ss v ccq clk acc 22 a 21 to a 0 oe acc ce wp clk dq 15 to dq 0 16 we rdy reset avd
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 10 device bus operations mbm29bs/bt64lf user bus operations table legend: l = v il , h = v ih , x = v il or v ih , = pulse input. see dc characteristics for voltage levels. *1: default active edge of clk is the rising edge. *2: autoselect code can be read both asyn chronous and synchronous read operation *3: we can be v il if oe is v il , oe at v ih initiates the write operations. *4: for four program operations, enable to input the same program command. *5: protect ?outermost? 2 8k words on low end of the boot block sectors.(sa0 and sa1) operation ce oe we wp a 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 dq 15 to dq 0 clk * 1 avd reset acc auto-select manufacturer code * 2 l l h x lhllllllcode x hh auto-select device code * 2 l l h x hlllllllcode x hh extended auto-select device code * 2 l l h x lhhhllllcode x hh l l h x hhhhl l l l code x hh asynchronous read - addresses latched * 3 llh xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 d out x hh asynchronous read - addresses steady state * 3 llh xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 d out xl hh load starting burst address (clk latch) * 3 lxh xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 xhh load starting burst address (avd latch) * 3 lxh xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 x h/l hh advance burst to next address * 3 l l h x xxxxxxxx d out h hh terminate burst read h x h x xxxxxxxx high-z x hh terminate burst read and start new burst read lxh xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 d out hh terminate burst read via reset x x h x xxxxxxxx high-z xx lh standby h x x x xxxxxxxx high-z xx hh output disable l h h x xxxxxxxx high-z xx hh program 1 - addresses latched (we ) * 4 lh l xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 d in ll hh program 1 - addresses latched (clk) * 4 lh l xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 d in l hh program 2 - addresses latched (clk) * 4 lh l xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 d in hh program 2 - addresses latched (avd ) * 4 lh l xa 0 a 1 a 2 a 3 a 4 a 5 a 6 a 7 d in h/l hh boot block sector write protection * 5 x x x l xxxxxxxx x xx hh all sector lock l x x x xxxxxxxx x xx hl reset x x x x xxxxxxxx high-z xx lh
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 11 mbm29bs/bt64lf command definitions table legend: ra = address of the memory location to be read. pa = address of the memory location to be programmed. address latches on the rising edge of avd pulse or active clk edge while avd =v il or falling edge of write pulse while avd =v il sa = address of the sector to be erased. the combination of a 21 , a 20 , a 19 , a 18 , a 17 , a 16 , a 15 and a 14 will uniquely select any sector. ba = bank address. address setted by a 21 , a 20 will select bank a, bank b, bank c and bank d. sla = address of the sector to be locked. set sector address (sa) and either a 6 = 1 for unlocked or a 6 = 0 for locked. rd = data read from location ra during read operation. pd = data to be programmed at location pa. data latches on the rising edge of write pulse. cr = configuration register address bits a 19 to a 12 . *1: this command is valid during fast mode. *2: the data ?00h? is also acceptable. notes: ? address bits a 21 to a 11 = x = ?h? or ?l? for all address commands except for pa, sa, ba. ? bus operations are defined in ?mbm29bs/bt64lf user bus operations table? (in device bus operations). ? both read/reset commands are functionally equivalent, resetting the device to the read mode. command sequence bus write cycles req?d first bus write cycle second write cycle third write cycle fourth write cycle fifth write cycle sixth write cycle addr. data addr. data addr. data addr. data addr. data addr. data asynchronous read / reset 1xxxhf0hrard???????? asynchronous read / reset 3 555h aah 2aah 55h 555h f0h ra rd ? ? ? ? autoselect 3 555h aah 2aah 55h (ba) 555h 90h?????? program 4 555h aah 2aah 55h 555h a0h pa pd ? ? ? ? chip erase 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h 555h 10h sector erase 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h sa 30h erase suspend 1 ba b0h ? ? ? ? ? ? ? ? ? ? erase resume 1 ba30h?????????? fast program 2 xxxh a0 pa pd set to fast mode 3 555h aah 2aah 55h 555h 20h ? ? ? ? ? ? reset from fast mode * 1 2 ba 90h xxxh f0h* 2 ???????? sector lock/unlock (sector command locking) 3 xxxh 60h xxxh 60h sla 60h ? ? ? ? ? ? set burst mode configuration register 3 555h aah 2aah 55h (cr) 555h c0h?????? query 1 (ba) 55h 98h??????????
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 12 mbm29bs/bt64lf sector protection verify autoselect codes table *1: a read cycle at address (ba) 01h outputs device code. when 227eh is output, it indicates that two additional codes, called extended device code s, will be required. therefore the sys tem may continue reading out these extended device codes at the address of (ba)0eh, as well as at (ba)0fh. *2: 2224h for v ccq : 1.8 v(mbm29bs64lf), 2234h for v ccq : 3.0 v (mbm29bt64lf). *3: outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. expanded autoselect code table type a 21 to a 13 a 7 a 6 a 5 a 4 a 3 a 2 a 1 a 0 code (hex) manufacture?s code ba* 2 v il v il v il v il v il v il v il v il 04h device code ba* 2 v il v il v il v il v il v il v il v ih 227eh extended device code* 1 ba v il v il v il v il v ih v ih v ih v il 2224h* 2 2234h* 2 ba v il v il v il v il v ih v ih v ih v ih 2201h sector lock/ unlock sector addresses v il v il v il v il v il v il v ih v il 01h* 3 type code dq 15 dq 14 dq 13 dq 12 dq 11 dq 10 dq 9 dq 8 dq 7 dq 6 dq 5 dq 4 dq 3 dq 2 dq 1 dq 0 manufacture?s code 04h0000000000000100 device code 227eh 0010001001111110 extended device code 2224h0010001000100100 2234h0010001000110100 2201h0010001000000001 sector lock/ unlock 00h0000000000000000 01h0000000000000001
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 13 flexible sector e rase architecture (continued) bank sector sector address sector size (kwords) address range bank address a 19 a 18 a 17 a 16 a 15 a 14 a 13 a 21 a 20 bank a sa0000000000 8 000000h to 001 fffh sa1000000001 8 002000h to 003 fffh sa2000000010 8 004000h to 005 fffh sa3000000011 8 006000h to 007 fffh sa40000001xx 32 008000h to 00 ffffh sa50000010xx 32 010000h to 017 fffh sa60000011xx 32 018000h to 01 ffffh sa70000100xx 32 020000h to 027 fffh sa80000101xx 32 028000h to 02 ffffh sa90000110xx 32 030000h to 037 fffh sa100000111xx 32 038000h to 03 ffffh sa110001000xx 32 040000h to 047 fffh sa120001001xx 32 048000h to 04 ffffh sa130001010xx 32 050000h to 057 fffh sa140001011xx 32 058000h to 05 ffffh sa150001100xx 32 060000h to 067 fffh sa160001101xx 32 068000h to 06 ffffh sa170001110xx 32 070000h to 077 fffh sa180001111xx 32 078000h to 07 ffffh sa190010000xx 32 080000h to 087 fffh sa200010001xx 32 088000h to 08 ffffh sa210010010xx 32 090000h to 097 fffh sa220010011xx 32 098000h to 09 ffffh sa230010100xx 32 0a0000h to 0a7fffh sa240010101xx 32 0a8000h to 0affffh sa250010110xx 32 0b0000h to 0b7fffh sa260010111xx 32 0b8000h to 0bffffh sa270011000xx 32 0c0000h to 0c7fffh sa280011001xx 32 0c8000h to 0cffffh sa290011010xx 32 0d0000h to 0d7fffh sa300011011xx 32 0d8000h to 0dffffh sa310011100xx 32 0e0000h to 0e7fffh sa320011101xx 32 0e8000h to 0effffh sa330011110xx 32 0f0000h to 0f7fffh sa340011111xx 32 0f8000h to 0f ffffh
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 14 (continued) bank sector sector address sector size (kwords) address range bank address a 19 a 18 a 17 a 16 a 15 a 14 a 13 a 21 a 20 bank b sa350100000xx 32 100000h to 107fffh sa360100001xx 32 108000h to 10 ffffh sa370100010xx 32 110000h to 117fffh sa380100011xx 32 118000h to 11 ffffh sa390100100xx 32 120000h to 127fffh sa400100101xx 32 128000h to 12 ffffh sa410100110xx 32 130000h to 137fffh sa420100111xx 32 138000h to 13 ffffh sa430101000xx 32 140000h to 147fffh sa440101001xx 32 148000h to 14 ffffh sa450101010xx 32 150000h to 157fffh sa460101011xx 32 158000h to 15 ffffh sa470101100xx 32 160000h to 167fffh sa480101101xx 32 168000h to 16 ffffh sa490101110xx 32 170000h to 177fffh sa500101111xx 32 178000h to 17 ffffh sa510110000xx 32 180000h to 187fffh sa520110001xx 32 188000h to 18 ffffh sa530110010xx 32 190000h to 197fffh sa540110011xx 32 198000h to 19 ffffh sa550110100xx 32 1a0000h to 1a7fffh sa560110101xx 32 1a8000h to 1affffh sa570110110xx 32 1b0000h to 1b7fffh sa580110111xx 32 1b8000h to 1bffffh sa590111000xx 32 1c0000h to 1c7 fffh sa600111001xx 32 1c8000h to 1cffffh sa610111010xx 32 1d0000h to 1d7 fffh sa620111011xx 32 1d8000h to 1dffffh sa630111100xx 32 1e0000h to 1e7fffh sa640111101xx 32 1e8000h to 1effffh sa650111110xx 32 1f0000h to 1f7fffh sa66011111100 8 1f8000h to 1f9fffh
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 15 (continued) bank sector sector address sector size (kwords) address range bank address a 19 a 18 a 17 a 16 a 15 a 14 a 13 a 21 a 20 bank c sa671000000xx 32 200000h to 207fffh sa681000001xx 32 208000h to 20f fffh sa691000010xx 32 210000h to 217fffh sa701000011xx 32 218000h to 21f fffh sa711000100xx 32 220000h to 227fffh sa721000101xx 32 228000h to 22f fffh sa731000110xx 32 230000h to 237fffh sa741000111xx 32 238000h to 23f fffh sa751001000xx 32 240000h to 247fffh sa761001001xx 32 248000h to 24f fffh sa771001010xx 32 250000h to 257fffh sa781001011xx 32 258000h to 25f fffh sa791001100xx 32 260000h to 267fffh sa801001101xx 32 268000h to 26f fffh sa811001110xx 32 270000h to 277fffh sa821001111xx 32 278000h to 27f fffh sa831010000xx 32 280000h to 287fffh sa841010001xx 32 288000h to 28f fffh sa851010010xx 32 290000h to 297fffh sa861010011xx 32 298000h to 29f fffh sa871010100xx 32 2a0000h to 2a7 fffh sa881010101xx 32 2a8000h to 2affffh sa891010110xx 32 2b0000h to 2b7 fffh sa901010111xx 32 2b8000h to 2bffffh sa911011000xx 32 2c0000h to 2c7 fffh sa921011001xx 32 2c8000h to 2c ffffh sa931011010xx 32 2d0000h to 2d7 fffh sa941011011xx 32 2d8000h to 2d ffffh sa951011100xx 32 2e0000h to 2e7 fffh sa961011101xx 32 2e8000h to 2effffh sa971011110xx 32 2f0000h to 2f7fffh sa98101111100 8 2f8000h to 2f9fffh
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 16 (continued) bank sector sector address sector size (kwords) address range bank address a 19 a 18 a 17 a 16 a 15 a 14 a 13 a 21 a 20 bank d sa991100000xx 32 300000h to 307fffh sa1001100001xx 32 308000h to 30f fffh sa1011100010xx 32 310000h to 317fffh sa1021100011xx 32 318000h to 31f fffh sa1031100100xx 32 320000h to 327fffh sa1041100101xx 32 328000h to 32f fffh sa1051100110xx 32 330000h to 337fffh sa1061100111xx 32 338000h to 33f fffh sa1071101000xx 32 340000h to 347fffh sa1081101001xx 32 348000h to 34f fffh sa1091101010xx 32 350000h to 357fffh sa1101101011xx 32 358000h to 35f fffh sa1111101100xx 32 360000h to 367fffh sa1121101101xx 32 368000h to 36f fffh sa1131101110xx 32 370000h to 377fffh sa1141101111xx 32 378000h to 37f fffh sa1151110000xx 32 380000h to 387fffh sa1161110001xx 32 388000h to 38f fffh sa1171110010xx 32 390000h to 397fffh sa1181110011xx 32 398000h to 39f fffh sa1191110100xx 32 3a0000h to 3a7 fffh sa1201110101xx 32 3a8000h to 3affffh sa1211110110xx 32 3b0000h to 3b7 fffh sa1221110111xx 32 3b8000h to 3bffffh sa1231111000xx 32 3c0000h to 3c7 fffh sa1241111001xx 32 3c8000h to 3c ffffh sa1251111010xx 32 3d0000h to 3d7 fffh sa1261111011xx 32 3d8000h to 3d ffffh sa1271111100xx 32 3e0000h to 3e7 fffh sa1281111101xx 32 3e8000h to 3effffh sa1291111110xx 32 3f0000h to 3f7fffh sa130111111100 8 3f8000h to 3f9fffh sa131111111101 8 3f8000h to 3fb fffh sa132111111110 8 3f8000h to 3fdfffh sa133111111111 8 3f8000h to 3fffffh
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 17 common flash memory interface code table (cfi) (continued) description a 6 to a 0 dq 15 to dq 0 query-unique ascii string ?qry? 10h 11h 12h 0051h 0052h 0059h primary oem command set 2h: amd/fj standard type 13h 14h 0002h 0000h address for primary extended table 15h 16h 0040h 0000h alternate oem command set (00h = not applicable) 17h 18h 0000h 0000h address for alternate oem extended table 19h 1ah 0000h 0000h v cc min (write/erase) dq 7 to dq 4 : 1 v/bit, dq 3 to dq 0 : 100 mv/bit 1bh 0017h v cc max (write/erase) dq 7 to dq 4 : 1 v/bit, dq 3 to dq 0 : 100 mv/bit 1ch 0019h v pp min voltage 1dh 0000h v pp max voltage 1eh 0000h typical timeout per single byte/word write 2 n s 1fh 0004h typical timeout for min size buffer write 2 n s 20h 0000h typical timeout per individual block erase 2 n ms 21h 0009h typical timeout for full chip erase 2 n ms 22h 0000h max timeout for byte/word write 2 n times typical 23h 0004h max timeout for buffer write 2 n times typical 24h 0000h max timeout per individual block erase 2 n times typical 25h 0004h max timeout for full chip erase 2 n times typical 26h 0000h device size = 2 n byte 27h 0017h flash device interface description 28h 29h 0001h 0000h max number of byte in multi-byte write = 2 n 2ah 2bh 0000h 0000h number of erase block regions within device 2ch 0003h erase block region 1 information 2dh 2eh 2fh 30h 0003h 0000h 0040h 0000h erase block region 2 information 31h 32h 33h 34h 007dh 0000h 0000h 0001h erase block region 3 information 35h 36h 37h 38h 0003h 0000h 0040h 0000h
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 18 (continued) description a 6 to a 0 dq 15 to dq 0 erase block region 4 information 39h 3ah 3bh 3ch 0000h 0000h 0000h 0000h query-unique ascii string ?pri? 40h 41h 42h 0050h 0052h 0049h major version number, ascii 43h 0031h minor version number, ascii 44h 0033h address sensitive unlock 0h = required 1h = not required 45h 0004h erase suspend 0h = not supported 1h = to read only 2h = to read & write 46h 0002h sector protection 0h = not supported x = number of sectors in per group 47h 0001h sector temporary unprotection 00h = not supported 01h = supported 48h 0000h sector protection algorithm 49h 0005h simultaneous operation 00h = not supported, x = total number of sectors in all banks except bank a 4ah 0063h burst mode type 00h = not supported 4bh 0001h page mode type 00h = not supported 4ch 0000h acc (acceleration) supply minimum 00h = not supported, dq 7 to dq 4 : 1 v/bit, dq 3 to dq 0 : 100 mv/bit 4dh 00b5h acc (acceleration) supply maximum 00h = not supported, dq 7 to dq 4 : 1 v/bit, dq 3 to dq 0 : 100 mv/bit 4eh 00c5h boot type 02h = bottom boot 03h = top boot 4fh 0002h program suspend 00h = not supported, 01h = supported 50h 0000h bank organization 57h 0004h bank a region information 58h 0023h bank b region information 59h 0020h bank c region information 5ah 0020h bank d region information 5bh 0023h
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 19 functional description asynchronous read operation (non-burst) mode when the device first powers up, it is enabled for asynchronous read operation. clk is ignored in this operation. to read data from the memory array, the system must first assert a valid address on a 21 to a 0 , while driving avd and ce to v il . we should remain at v ih . the rising edge of avd latches the address or while avd =v il , address is latched by address change ti ming. the data will appear on dq 15 to dq 0 . since the memory array is divided into four banks, each bank remains enabled for read access until the command register contents are altered. address access time (t acc ) is equal to the delay from stable addresses to valid output data. the chip enable access time (t ce ) is the delay from the stable addresses and stable ce to valid data at the outputs. the output enable access time (t oe ) is the delay from the falling edge of oe to valid data at the output. the internal state machine is set for reading array data in asynchronous mode upon device power-up, or after a hardware reset. during power transition, reset must be held low(refer to "power on/off timing dia- gram").this ensures that no spurious alteration of the memory content occurs during the power transition. synchronous (burst) read operation mode the device is capable of continuous sequential burst operation and linear burst operation of a preset length. prior to entering burst mode, the system should determine how many wait states are desired for the initial word (t iacc ) of each burst access, what mode of burst operation is desir ed, which edge of the cl ock will be the active clock edge, and how the rdy signal will transition with valid data. the system would then write the configuration register set command sequence. see "configuration register set command" and "command definitions" for further details. once the system has written the "configuration register set" command sequence, the device read mode is enabled for synchronous reads only. however program operation is independent of the configuration register status. the initial word is output t iacc after the active edge of the first clk cycle. subsequent words are output t bacc after the active edge of each successive clock cycle, which automatically increments the internal address counter. the device will continue to output seque ntial burst data, wrapping around to address after it reaches the highest addressable memory location in group address range, until the system drives ce to v ih , reset to v il , or avd to v il in conjunction with a new address. see ?mbm29bs/bt64lf user bus operations table? in device bus operations. if the clock frequency is less than 6 mhz during a burst mode operation, additional latencies will occur. rdy indicates the length of th e latency by pulsing low. 8-, 16-, and 32-word linear burst with wrap around the remaining three modes are of the linear wrap around design, in which a fixed number of words are read from consecutive addresses. in each of these modes, the burst addresses read are determined by the group within which the starting address falls. the groups are sized according to the number of words read in a single burst sequence for a given mode (see ?mbm29bs/bt64lf user bus operations table? in device bus operations). as an example: if the starting address in the 8-word with wrap-around mode is 39h, the address range to be read would be 38-3fh, and the burst sequence would be 39-3a-3b-3c-3d-3e-3f-38h-etc. the burst sequence begins with the starting address written to the device, but wraps back to the first address in the selected group.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 20 in a similar fashion, the 16-word and 32-word linear wrap modes begin their burst sequence on the starting address written to the device, and then wrap back to the first address in the selected address group. the rdy pin indicates when data is valid on the bus in both asnchronous and synchronous read mode. the devices can wrap through a maximum of 128 words of data (8 words up to 16 times, 16 words up to 8 times, or 32 words up to 4 times) before requiring a new synchronous access (latching of a new address). configuration register the device uses a configuration register to set the various burst parameters: number of wait states, burst read mode, active clock edge, rdy configuration, and synchronous mode active. simultaneous operation the device features functions that enable reading of data from one memory bank while a program or erase operation is in progress in the other memory bank (simultaneous operation) , in addition to conventional features (read, program, erase, erase-suspend read, and erase-suspend program) . the bank can be selected by bank address (a 21 , a 20 )with zero latency. the device cons ists of the following four banks : bank a : 4 x 8k word and 31 x 32k word; bank b : 32 x 32k word; bank c : 32 x 32k word; bank d : 4 x 8k word and 31 x 32k word. the device can execute simu ltaneous operations between bank 1, a bank chosen from among the four banks, and bank 2, a bank consisting of the three remaining banks. (see ?flexbank tm architecture table?.) this is what we call a ?flexbank?, for example, the rest of banks b, c and d to let the system read while bank a is in the process of program (or erase) operation. however, the different types of operations for the three banks are impossible, e.g. bank a writing, bank b erasing, and bank c reading out. with this ?flexbank?, as described in ?example of virtual banks combination table?, the system gets to select from four combinations of data volume for bank 1 and bank 2, which works well to meet the system requirement. the simultaneous operation cannot execute multi-function mode in the same bank. ?simultaneous operation table? shows the possible combinations for simultaneous operation. (refer to ?(20) bank-to-bank read/write cycle timings? in timing diagrams.) burst address groups table mode group size group address ranges 8-word with wrap-around 8 words 0-7h, 8-fh, 10-17h, ... 16-word with wrap-around 16 words 0-fh, 10-1fh, 20-2fh, ... 32-word with wrap-around 32 words 00-1fh, 20-3fh, 40-5fh, ... flexbank tm architecture table bank splits bank 1 bank 2 volume combination volume combination 1 16m bit bank a 48m bit remainder (bank b, c, d) 2 32m bit bank a, b 32m bit remainder (bank c, d)
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 21 note : when multiple sector erase over several banks is operated, the system cannot read out of the bank to which a sector being erased belongs. for example, suppose that erasing is taking place at both bank a and bank b, neither bank a nor bank b is read out (they would output the sequence flag once they were selected.) meanwhile the system would get to read from either bank c or bank d. note : bank 1 and bank 2 are divided for the sake of co nvenience at simultaneous operation. actually, the bank consists of 4 banks, bank a, bank b, bank c and bank d. bank address (ba) meant to specify each of the banks. standby mode there are two ways to implement the standby mode on the device, one using both the ce and reset pins, and the other via the reset pin only. when using both pins, a cmos standby mode is achieved with ce and reset input held at v cc 0.2 v. under this condition the current consumed is less than 5a max. during embedded algorithm operation, v cc active current (i cc2 ) is required even if ce =?h?. the device can be read with standard access time (t ce ) from either of these standby modes. when using the reset pin only, a cmos standby mode is achieved with reset input held at v ss 0.3 v (ce =?h? or ?l?) . under this condition the current consumed is less than 5a max. once the reset pin is set high, the device requires t rh as a wake-up time for output to be valid for read access. during standby mode, the output is in the high impedance state, regardless of oe input. i cc3 in the dc characteristics table represents the standby current specification. example of virtual banks combination table bank splits bank 1 bank 2 megabits combination of memory bank sector sizes megabits combination of memory bank sector sizes 1 16m bit bank a four 8k word, thirty-one 32k word 48m bit bank b + bank c + bank d four 8k word, ninety-five 32k word 232m bit bank a + bank d eight 8k word, sixty-two 32k word 32m bit bank b + bank c sixty-four 32k word simultaneous operation table case bank 1 status bank 2 status 1 read mode read mode 2 read mode autoselect mode 3 read mode program mode 4 read mode erase mode 5 autoselect mode read mode 6 program mode read mode 7 erase mode read mode
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 22 automatic sleep mode automatic sleep mode works to restrain power consumption during read-out of the device data. this mode can be useful in the application such as a handy terminal which requires low power consumption. while in asynchronous mode, the device automatically enables this mode when addresses remain stable for t acc +60 ns. while in synchronous mode, the device automatically enables this mode when either the first active clk level is greater than t acc or the clk runs slower than 5 mhz. a new burst operations is required to provid new data. it is not necessary to control ce , we , and oe on this mode. under the mode, the current consumed is typically 0.2 a (cmos level)(i cc5 ). during simultaneous operation, v cc active current (i cc2 ) is required. since the data are latched during this mode, the data are continuously read out. when the addresses are changed, the mode is automatically canceled and the device reads the data for changed addresses. output disable when the oe input is at v ih , output from the device is disabled. the outputs are placed in the high impedance state. autoselect mode the autoselect mode allows the reading out of a binary code and identifies its manufacturer and type.it is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. this mode is functional over the entire temperature range of the device. autoselect may only be entered and used when in the asynchronous mode. the manufacturer and device codes can be read via the command register, three identifier bytes may then be sequenced from the device outputs by toggling addresses. all addresses are don?t cares except a 7 to a 0 . (see ?mbm29bs/bt64lf user bus operations table? in device bus operations.) the command sequence is illustrated in ?mbm 29bs/bt64lf command de finitions table? (in device bus operations). (refer to autoselect command section.) in the command autoselect mode, the bank addresses ba; (a 21 , a 20 ) must point to a specific bank during the third write bus cycle of the autosele ct command. then the au toselect data will be re ad from that bank while array data can be read from the other bank. a read cycle from address 00h returns the manufacturer?s code (fujitsu=04h) . a read cycle at address 01h outputs device code. when 227eh is output, it indicates that two additional codes, called extended device codes will be required. theref ore the system may continue r eading out these extended de vice codes at addresses of 0eh and 0fh. (refer to ?mbm29bs/bt64lf sector protection verify autoselect codes table? and ?expanded autoselect code table? in device bus operations. ) write device erasure and programming are accomplished via the command register. the contents of the register serve as input to the internal state machine. the state machine output dictates the function of the device. the command register itself does not occupy any addressable memory location. the register is a latch used to store the commands, along with the address and data information needed to execute the command. the device has the capability of perf orming programming operations. it has inputs/outputs th at accept both address and data information. during a program operation (avd latched address) (program2), the command register is written by bringing active clk edge while avd and ce to v il , and oe to v ih when providing an address to the device, addresses are latched on the clk active edge or avd rising edge (when clk active edge doesn?t appear while avd=v il ) and drive we and ce to v il , and oe to v ih , data is latched on the rising edge of we . during a program operation (we latched address)(program1), the command register is written by bringing we to v il , while ce is at v il and oe is at v ih . addresses are latched on the falling edge of we or ce , whichever
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 23 happens later, while data is latched on the rising edge of we or ce (whichever happensfirst). standard microprocessor write timings are used. the programming operations are independent of the set device read mode bit in the burst mode configuration register. refer to ac write characteristics and the erase/programming waveforms for specific timing parameters. reset (hardware reset) the reset input provides a hardware method of re-setting the device to reading array data. when reset is driven low for at least a period of t rp , the device immediately terminates any operation in progress, tristates all outputs, resets the configuration register, and ignores all read/write commands for the duration of the reset pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. current is reduced for the duration of the reset pulse. when reset is held at v ss 0.2 v, the device draws cmos standby current (i cc4 ). if reset is held at v il but not within v ss 0.2 v, the standby current will be greater. reset may be tied to the system reset circuitry. a system re set would thus also reset the flash memory, enabling the system to read the boot-up firmware from the flash memory. if reset is asserted during a program or erase operation, the device requires a time of t ready (during embedded algorithms) before the device is ready to read data again. if reset is asserted when a program or erase operation is not executing, the reset operation is completed within a time of t ready (not during embedded algorithms). the system can read data t rh after reset returns to v ih . refer to the ac characteristics tables for reset parameters. accelerated program operation the device offers accelerated program operation which enables the programming in high speed. if the system asserts v acc to the acc pin, the device automatically enters the acceleration mode and the time required for program operation will reduce to abou t 60%. note that sectors must be unlocked by sector unlock command sequence (xxxh/60h, xxxh/60h, sla/60h), prior to raising acc to v acc. when at v il , acc locks all sector s. should be at v ih for all other conditions. the system would use a fast program command sequence when programming during acceleration mode. set command to fast mode and reset command from fast mode are not necessary. when the device enters the acceleration mode, the device automatically set to fast mode. therefore, the pressent sequence could be used for programming and detection of completion during acceleration mode. removing v acc from the acc pin returns the device to normal operation. do not remove v acc from acc pin while programming. see ?(15) accelerated fast mode programming timing? in timing diagrams.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 24 protection the mbm29bs/bt64lf features several levels of sector protection, which can disable both the program and erase operations (1) write protect (wp ) [hardware protection] the device features a hardware protection option using a write protect pin that prevents programming or erasing. the wp pin is associated with the ?outermost? 2 8k words on low end of boot sectors. the wp pin has no effect on any other sector. when wp is taken to v il , programming and erase operations of the ?outermost? 2 8k words sectors are disabled. by taking wp back to v ih , the ?outermost? 2 8k words sectors are enabled for program and erase operations, the user must hold the wp pin at either v ih or v il during the entire program or erase operation of the ?outermost? two sectors on low end of boot sectors (sa0 and sa1). (2) acc protect (acc) [hardware protection2] the device has also hardware protect feature by acc pin. when acc is v il , all sectors are locked. should be at v ih for all other condition (3) software command locking(scl) [software protection] the sector lock/unlock feature allows the system to determine which sectors are protected from accidental writes. when the device is first powered up, all sectors are locked. to unlock a sector, the system must write the sector lock/unlock command. enhanced i/o (v ccq ) control the enhanced i/o (v ccq ) control allows the host system to set the voltage levels that the device generates at its data outputs and the voltages tolerated at its data inputs to the same voltage level that is asserted on the v ccq pin. this allows the device to operate in 1.8 v and 3 v system environments as required. for example, a v ccq of 2.70 v to 3.15 v allows for i/o at the 3-volt level, driving and receiving signals to and from other 3 v devices on the same bus.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 25 command definitions device operations are selected by wr iting specific address and data sequences into the command register. some commands require bank address (ba) input. when command sequences are input into a bank reading, the commands have priority over the reading. ?mbm29bs/bt64lf command definitions table? in device bus operations shows the valid register command sequences. note that the erase suspend (b0h) and erase resume (30h) commands are valid only while the sector erase operation is in progress. moreover, read/reset commands are functionally equivalent, resetting the devi ce to the read mode. please note that commands are always written at dq 7 to dq 0 and dq 15 to dq 8 bits are ignored. asynchronous read/reset command in order to return from autoselect mode or exceeded timing limits (dq 5 = 1) to read/reset mode, verify mode of secter protect commands the reset operation is initiated by writing the reset command sequence into the command register. microprocesso r read cycles retrieve array data from the memory. the device remains enabled for reads until the command register contents are altered. the device will automatically power-up in the asynch ronous read/reset state. in this case, a command sequence is not required to read data. standar d microprocessor read cycles will retrieve array data. while avd = v il , asynchronous read operation is same as conventional fujitsu flash memory. addresses are latched by the rising edge of avd or address change timing. t acc defined from address change timing or avd falling edge, because addresses are input to internal circuit while avd = v il . if the device is used by avd ratch asynchronous read operation, addresses should be kept from avd falling edge to avd rising edge or t acc defined by address change timing, not avd falling edge. this default value ensures that no spurious alteration of the memory content occurs during the power transition. refer to ? (6) asynchronous mode read with avd latched? in timing diagrams. synchronous (burst) read command this operation is enable after configuratrion register command is issued (a 19 = 0). addresses are latched by the avd rising edge or clk active edge while avd = v il . configuration register set command the device uses a configuration register to set the various burst parameters: number of wait states, burst read mode(burst length), active clock edge, rdy configuration, and synchronous read mode active. the configuration register must be set before the device will enter burst mode. the configuration register is loaded with a three-cycle command sequence. the first two cycles are standard unlock sequences. on the third cycle, the data should be c0h, address bits a 11 to a 0 should be 555h, address bits a 19 to a 12 set the code to be latched, and address bit a 21 and a 20 are don?t care. the device will power up or after a hardware reset with the default setting, which is in asynchronous mode. the register must be set before the device can enter synchronous mode. the configuration register can not be changed during device operations (program, erase, or sector lock). read mode setting on power-up or hardware reset, the device is set to be in asynchronous read mode. this setting allows the system to enable or disable burst mode during system operations. address a 19 determines this setting: "1? for asynchronous mode, "0" for synchronous mode. programmable wait state configuration setting the programmable wait state feature informs the device of the number of clock cycles that must elapse after avd is driven active before data will be available. this va lue is determined by the in put frequency of the device. address bits a 14 to a 12 determine the setting (see ?third cycle address/data table?).the wait state command sequence instructs the device to set a particular number of clock cycles for the initial access in burst mode. the number of wait states that should be programmed into t he device is directly related to the clock frequency.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 26 it is recommended that the wait state command sequence be written, even if the default wait state value is desired, to ensure the device is set as expected. ?wait state table? describes the typical number of clock cycles (wait states) for conditions.the host system must set the appropriate number of wait states in the flash device depending on the clock frequency and the presence of a boundary crossing. burst read mode configuration setting(burst length) the device supports three different burst read modes: 8, 16, and 32 word linear wrap around modes. a continuous sequence begins at the starting address and advances the address pointer until the burst operation is complete. if the highest address in the device is reached during the continuous burst read mode, the address pointer wraps around to the lowest address. for example, an eight-word linear burst with wrap around begins on the starting burst address written to the device and then advances to the next 8-word boundary. the address pointer then returns to the 1st word after the previous eight-word boundary, wrapping through the starting location. the sixteen- and thirty-two linear wrap around modes operate in a fashion similar to the eight-word mode. ?burst read mode settings table? shows the address bits and settings for the three burst read modes. third cycle address/data table a 14 a 13 a 12 total initial access cycles 000 2 001 3 010 4 011 5 100 6 101 7 wait state table conditions at address typical no. of clock cycles after avd low 40 mhz 54 mhz wait state for initial access 5 6 burst read mode settings table burst modes address bits a 16 a 15 8-word linear wrap around 0 1 16-word linear wrap around 1 0 32-word linear wrap around 1 1
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 27 active clock edge configuration setting by default, the device will deliver data on the rising edge of the clock after the initia l synchronous access time. subsequent outputs will also be on the following rising edge s, barring any delays. the device can be set so that the falling clock edge is active for a ll synchronous accesses. address bit a 17 determines this setting; "1" for rising active, "0" for falling active. rdy configuration setting by default, the device is set so that the rdy pin will output v oh whenever there is valid data on the outputs. the device can be set so that rdy goes active one data cycle before active data. address bit a 18 determines this setting; "1" for rdy active with data, "0" for rdy active one clock cycle before valid data. ?hardware sequence flags table? shows the address bits that determine the configuration register settings for various device functions. autoselect command flash memories are intended for use in applications wh ere the local cpu alters memory contents. therefore, manufacture and device codes must be accessible while the device resides in the target system. prom pro- grammers typically access the signature codes by raising a 9 to a higher voltage. however, multiplexing high voltage onto the address lines is not generally desired system design practice. the device contains an autoselect command operation to supplement traditional prom programming method- ology. the operation is initiated by writing the autoselect command sequence into the command register. the autoselect command sequence is init iated first by writing two unlock cycle s. this is followed by a third write cycle that contains the bank address (ba) and the autoselect command. then the manufacture and device codes can be read from the bank, and actual data from the memory cell can be read from another bank. the higher order address (a 21 , a 20 ) required for reading out the manufacture and device codes demands the bank address (ba) set at the third write cycle. following the command write, a read cycle from address (ba)00h returns the manufacturer?s code (fujitsu=04h). and a read cycle at address (ba)01h outputs device code. when 227eh was output, this indicates that two configuration register table address bit function settings (binary) a 19 set device read mode 0 = synchronous read (burst mode) enabled 1 = asynchronous mode (default) a 18 rdy 0 = rdy active one clock cycle before data 1 = rdy active with data a 17 clock 0 = burst starts and data is output on the falling edge of clk 1 = burst starts and data is output on the rising edge of clk a 16 burst read mode 00 = reserved 01 = 8-word linear with wrap around 10 = 16-word linear with wrap around 11 = 32-word linear with wrap around a 15 a 14 programmable wait state 000 = data is valid on the 2th active clk edge after avd transition to v ih 001 = data is valid on the 3th active clk edge after avd transition to v ih 010 = data is valid on the 4th active clk edge after avd transition to v ih 011 = data is valid on the 5th active clk edge after avd transition to v ih 100 = data is valid on the 6th active clk edge after avd transition to v ih 101 = data is valid on the 7th active clk edge after avd transition to v ih 110 = reserved 111 = reserved a 13 a 12
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 28 additional codes, called extended device codes will be required. theref ore the system may continue reading out these extended device codes at the address of (ba) 0eh, as well as at (ba) 0fh. (refer to ?mbm29bs/ bt64lf sector protection verify autoselect codes table? and ?expanded autoselect code table? in device bus operations. ) the sector state will be informed by address (sa)02h. scanning th e sector addresses (a 21 , a 20 , a 19 , a 18 , a 17 , a 16 , a 15 , a 14 , and a 13 ) while (a 7 ,a 6 , a 5 , a 4 , a 3 , a 2 , a 1 ,a 0 ) = (0, 0, 0, 0, 0, 0, 1, 0) will produce a logical ?1? at device output dq 0 for a protected sector group. the programming verification should be performed by verifying sector group protection on the protected sector. (see ?mbm29bs/bt64lf user bus operations table? in device bus operations.) the manufacture and device codes can be read from the selected bank. to read the manufacture and device codes and sector protection status from a non-selected bank, it is necessary to write the read/reset command sequence into the register. autoselect command should then be written into the bank to be read. if the software (program code) for autoselect command is stored in the flash memory, the device and manu- facture codes should be read from the other bank, which does not contain the software. no subsequent data will be made available if the autoselect data is read in synchronous mode. to terminate the operation, it is necessary to write the read/reset command sequence into the register. to execute the autoselect command during the operation, read/reset command sequence must be written before the autoselect command. word programming command the device is programmed on word-by-word basis. programming is a four bus cycle operation. there are two ?unlock? write cycles. these are followed by the program set-up command and data write cycles. during a programming operation(avd latched address)(program2), the command register is written by bringing active clk edge while avd and ce to v il , and oe to v ih when providing an address to the device, addresses are latched on the clk active edge or avd rising edge(when clk active edge doesn?t appear while avd=v il ). and drive we and ce to v il , and oe to v ih , data is latched on the rising edge of we . during a programming operation(we latched address)(program1), the command register is written by bringing we to v il , while ce is at v il and oe is at v ih . addresses are latched on the falling edge of we or ce , whichever happens later, while data is latched on the rising edge of we or ce (whichever happens first). upon executing the embedded program algorithm command sequen ce, the system is not requir ed to provide further controls or timings. the device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. the system can determine the status of the program operation by using dq 7 (data polling), dq 6 (toggle bit). the data polling and toggle bit must be performed at th e memory location which is being programmed. the automatic programming operation is completed when the data on dq 7 is equivalent to data written to this bit at which time the device returns to the read mode and addresses are no longer latched (see ?hardware sequence flags table?). therefore, the device requires that a valid address to the device be supplied by the system in this particular instance. hence, data polling must be performed at the memory location which is being programmed. if hardware reset occurs during the programming operation, the data being written is not guaranteed. programming is allowed in any sequence and across sector boundaries. beware that a data ?0? cannot be programmed back to a ?1?. attempting to do so may either hang up the device or result in an apparent success according to the data polling algorithm but a read from read/reset mode will show that the data is still ?0?. only erase operations can convert from ?0?s to ?1?s. ?(2) embedded program tm algorithm? in flow chart illustrates the embedded program tm algorithm using typical command strings and bus operations. chip erase command chip erase is a six-bus cycle operation. there are two ?unlock? write cycles. these are followed by writing the ?set-up? command. two more ?unlock? write cycles are then followed by the chip erase command.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 29 chip erase does not require the user to program the device prior to erase. upon executing the embedded erase algorithm command sequenc e the device will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase. (preprogram function). the system is not required to provide any controls or timings during these operations. the system can determine the status of the erase operation by using dq 7 (data polling), or dq 6 (toggle bit). the chip erase begins on the rising edge of the last ce or we , whichever happens first in the command sequence and terminates when the data on dq 7 is ?1? (see write operation status section.) at which time the device returns to read the mode. chip erase time; sector erase time all sectors + chip program time (preprogramming) ?(3) embedded erase tm algorithm? in flow chart illustrates the embedded erase tm algorithm using typical command strings and bus operations. sector erase command sector erase is a six bus cycle operation. there are two ?unlock? write cycles. these are followed by writing the ?set-up? command. two more ?unlock? write cycles are then followed by the sector erase command. the sector address (any address location within the desired sector) is latched on the falling edge of ce or we whichever happens later, while the command (data = 30h) is latched on the rising edge of ce or we which happens first. after time-out of ?t tow ? from the rising edge of the last sector eras e command, the sector er ase operation will begin. multiple sectors may be erased concurrently by writing the six bus cycle operations on ?mbm29bs/bt64lf command definitions table? (in device bus operations). this sequen ce is followed with writes of the sector erase command to addresses in other sectors desired to be concurrently erased. the time between writes must be less than ?t tow ? otherwise that command will not be acce pted and erasure will not start. it is recommended that processor interrupts be disabled during this time to guarantee this condition. the interrupts can be re-enabled after the last sector erase command is written. a time-out of ?t tow ? from the rising edge of last ce or we whichever happens first will initia te the execution of the sector erase command(s). if another falling edge of ce or we , whichever happens first occurs within the ?t tow ? time-out window the timer is reset. (monitor dq 3 to determine if the sector erase ti mer window is still open, see section dq 3 , sector erase timer.) any command other than sector erase or erase suspend du ring this time-out period will reset the device to the read mode, ignoring the previous command string. resetting the device once execution has begun will corrupt the data in the sector. in that case, restart the erase on those sectors and allow them to complete. (refer to write operation status section for sector erase timer operation.) loading the sector erase buffer may be done in any sequence and with any number of sectors. sector erase does not require the user to program the device prior to erase. the device automatically programs all memory locations in the sector(s) to be erased prior to electrical erase (preprog ram function). when erasing a sector or sectors the remaining unselected sectors are not affected. the system is not required to provide any controls or timings during these operations. the system can determine the status of the erase operation by using dq 7 (data polling), or dq 6 (toggle bit). the sector erase begins after the ?t tow ? time out from the rising edge of ce or we whichever happens first for the last sector erase command pulse and terminates when the data on dq 7 is ?1? (see write operation status section.) at which time the device returns to the read mode. data polling and toggle bit must be performed at an address within any of the sectors being erased. multiple sector erase time; [sector erase time + sector program time (preprogramming)] number of sector erase. in case of multiple sector erase across bank bounda ries, a read from the bank (read-while-erase) to which sectors being erased belong cannot be performed.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 30 ?(3) embedded erase tm algorithm? in flow chart illustrates the embedded erase tm algorithm using typical command strings and bus operations. erase suspend/resume command the erase suspend command allows the user to interrupt a sector erase operation and then perform data reads from or programs to a sector not being erased. this command is applicable only during the sector erase operation which includes t he time-out period for sector erase. the erase suspend command will be ignored if written during the chip erase operation or embedded program algorithm. writting the erase suspend command (b0h) during the sector erase time-out results in immediate termination of the time-out period and suspension of the erase operation. writing the erase resume command (30h) resumes the erase operation. the addresses are ?don?t cares? when writting the erase suspend or erase resume command.when the erase suspend command is written during the sector erase operation, the device will take a maximum of ?t spd ? to suspend the erase operation. when the device has entered the erase-suspended mode, the dq 7 bit will be at logic ?1?, and dq 6 will stop toggling. the user must use the address of the erasing sector for reading dq 6 and dq 7 to determine if the erase operation has been suspended. further writes of the erase suspend command are ignored. when the erase operation has been suspended, the device defaults to the erase-suspend-read mode. reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that have not been erase-suspended. successively reading from the erase-suspended sector while the device is in the erase-suspend-read mode will cause dq 2 to toggle. (see the section on dq 2 .) after entering the erase-suspend-read mode, the user can program the device by writing the appropriate command sequence for program. this program mode is known as the erase-suspend-program mode. again, programming in this mode is the same as programming in the regular program mode except that the data must be programmed to sectors that are not erase-suspended. successively reading from the erase-suspended sector while the device is in the erase- suspend-program mode will cause dq 2 to toggle. the end of the erase-suspended program operation is detected by the data polling of dq 7 or by the toggle bit i (dq 6 ) which is the same as the regular program operation. note that dq 7 must be read from the program address while dq 6 can be read from any address. to resume the operation of sector erase, the resume command (30h) should be written. any further writes of the resume command at this point will be ignored. another erase suspend comman d can be written after the chip has resumed erasing. sector lock/unlock command(software command locking(scl)) the sector lock/unlock command sequence allows the system to determine which sectors are protected from accidental writes. when the device is first powered up, all sectors are locked. to unlock a sector, the system must write the sector lock/unlock command sequence. two cycles are first written: addresses are don?t care and data is 60h. during the third cycle, the sector address (sla) and unlock command (60h) is written, while specifying with address a 6 whether that sector should be locked (a 6 = v il ) or unlocked (a 6 = v ih ). after the third cycle, the system can continue to lock or unlock additional cycles, or exit the sequence by writing f0h (reset command). note that the last two outermost boot sectors can be locked by taking the wp signal to v il .
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 31 extended command (1) fast mode the device has fast mode function. this mode dispenses with the initial two unlock cycles required in the standard program command sequence writing fast mode command into the command register. in this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command. (do not write erase command in this mode.) the read operation is also executed after exiting this mode. to exit this mode, it is necessary to write fast mode reset command into the command register. (refer to ?(6) embedded programming algorithm for fast mode? in flow chart.) the v cc active current is required even ce = v ih during fast mode. (2) fast programming during fast mode, the programming can be executed with two bus cycles operation. the embedded program algorithm is executed by writing program set-up command (a0h) and data write cycles (pa/pd). (refer to ?(6) embedded programming algorithm for fast mode? in flow chart.) (3) cfi (common flash memory interface) the cfi (common flash memory interface) specific ation outlines device and host system software interrogation handshake which allows specific vendor-s pecified software algorithms to be used for entire families of device. this allows device-independent , jedec id-independent, a nd forward-and backward- compatible software support for the specified flash device families. re fer to cfi specification in detail. the operation is initiated by writ ing the query command (98h) into the command register. following the command write, a read cycle from specific address retriv es device information. please note that output data of upper byte (dq 15 to dq 8 ) is ?0? in word mode (16 bit) read. refer to the cfi code table. to terminate operation, it is necessary to write the read/reset command sequence into the register. write operation status detailed in ?hardware sequence flags table? are all the status flags which can determine the status of the bank for the current mode operation. the read operation from the bank which doesn?t operate embedded algorithm returns data of memory cells. these bits offer a method for determining whether an embedded algorithm is properly completed. the information on dq 2 is address-sensitive. this means that if an address from an erasing sector is consecutively read, the dq 2 bit will toggle. however, dq 2 will not toggle if an address from a non- erasing sector is consecutively read. this allows users to determine which sectors are in erase and which are not. the status flag is not output from banks (non-busy banks) which do not execute embedded algorithms. for example, a bank (busy bank) is executing an embedded algorithm. when the read sequence is [1] < busy bank >, [2] < non-busy bank >, [3] < busy bank >, the dq 6 toggles in the case of [1] and [3]. in case of [2], the data of memory cells are output. in the erase-suspend read mode with the same read sequence, dq 6 will not be toggled in [1] and [3].
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 32 *1: successive reads from the erasin g or erase-suspend sector will cause dq 2 to toggle. *2: reading from non-erase suspend sector address will indicate logic ?1? at the dq 2 bit. *3: when the device is set to asynchronus mode, these status flags should be read by ce toggle. notes: ? dq 0 and dq 1 are reserve pins for future use. ? dq 4 is limited to fujitsu internal use. dq 7 data polling the device features data polling as a method to indicate to th e host that the embedded algorithms are in progress or completed. during the em bedded program algorithm, an atte mpt to read the de vice will produce a complement of data last written to dq 7 . upon completion of the embedded program algorithm, an attempt to read the device will produce tr ue data last written to dq 7 . during the embedded erase algorithm, an attempt to read the device will produce a ?0? at the dq 7 output. upon completion of the embedded erase algorithm, an attempt to read device will produce a ?1? on dq 7 . the flowchart for data polling (dq 7 ) is shown in ?(4) data polling algorithm? (in flow chart). for programming, the data polling is valid after the rising edge of th e fourth write pulse in the four write pulse sequences. for chip erase and sector erase, the data polling is valid after the rising edge of the sixth write pulse in the six write pulse sequences. data polling must be performed at sector addresses of se ctors being erased, not pro- tected sectors. otherwise the status may become invalid. if a program address falls within a protected sector, data polling on dq 7 is active for approximately 1 s, then that bank returns to the read mode. after an erase command sequence is written, if all sectors selected for erasing are protected, data polling on dq 7 is active for approximately 400 s, then the bank returns to read mode. once the embedded algorithm operation is close to being completed, the device data pins (dq 7 ) may change asynchronously while the output enable (oe ) is asserted low. this means that device is driving status information on dq 7 at one instant, and then that by te?s valid data at the next instant. depending on when the system samples hardware sequence flags table status dq 7 dq 6 dq 5 dq 3 dq 2 in progress embedded program algorithm dq 7 toggle 0 0 no toggle * 3 embedded erase algorithm erase sector 0 toggle 0 1 toggle * 1 non-erase sector no toggle * 3 erase suspended mode erase suspend read (erase suspended sector) 1 no toggle * 3 00toggle erase suspend read (non-erase suspended sector) data data data data data erase suspend program (non-erase suspended sector) dq 7 toggle 0 0 1 * 2, * 3 exceeded time limits embedded program algorithm dq 7 toggle 1 0 no toggle * 3 embedded erase algorithm 0 toggle 1 1 n/a erase suspended mode erase suspend program (non-erase suspended sector) dq 7 toggle 1 0 n/a
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 33 the dq 7 output, it may read the status or valid data. even if device has completed the embedded algorithm operation and dq 7 has a valid data, data outputs on dq 0 to dq 6 may still be invalid. the valid data on dq 0 to dq 7 will be read on successive read attempts. the data polling feature is active only during the embedde d programming algorithm, embedded erase algorithm or sector erase time-out. (see ?toggle bit status table?.) see ?(14) chip/sector erase command sequence?, ?(16) data polling timings (during embedded algorithm)? in timing diagrams for the data polling timing specifications and diagrams. dq 6 toggle bit i the device also features the ?toggle bit i? as a method to indicate to the host system that the embedded algorithms are in progress or completed. during embedded program or erase algorithm cycle, successive attempts to read (oe toggling) data from the busy bank will result in dq 6 toggling between one and zero. once the embedded program or erase algorithm cycle is completed, dq 6 will stop toggling and valid data will be read on the next successive attempts. during programming, the toggle bit i is valid after the rising edge of the fourth write pulse in the four write pulse sequences. for chip erase and sector erase, the toggle bit i is valid after the rising edge of the sixth write pulse in the six write pulse sequences. the toggle bit i is active during the sector time out. in programming, if the sector be ing written is protecte d, the toggle bit will toggle for about 1 s and then stop toggling with data unchang ed. in erase, the device will erase all sele cted sectors except for protected ones. if all selected sectors are protected, th e chip will toggle the toggle bit for ab out 400 s and then drop back into read mode, having data kept remained. either ce or oe toggling will cause dq 6 to toggle. in addition, an eras e suspend/resume command will cause dq 6 to toggle. the system can use dq 6 to determine whether a sector is actively erased or is erase-suspended. when a bank is actively erased (that is, the embedded erase algorithm is in progress) , dq 6 toggles. when a bank enters the erase suspend mode, dq 6 stops toggling. successive read cycl es during erase-suspend-program cause dq 6 to toggle. to operate toggle bit function properly, ce or oe must be high when bank address is changed. see ?(15) accelerated fast mode programming timing?, ?(16) data polling timings (during embedded algorithm)? in timing diagrams for the toggle bit i timing specifications and diagrams. dq 5 exceeded timing limits dq 5 will indicate if the program or erase time has exceed ed the specified limits (int ernal pulse count) . under these conditions dq 5 will produce ?1?. this is a fa ilure condition indicating that the program or erase cycle was not successfully completed. data polling is only operating function of the device under this condition. the ce circuit will partially power down device under these conditions (to approximately 2 ma) . the oe and we pins will control the output disable functions as described in ?mbm29bs/bt64lf user bus operations table? in device bus operations. the dq 5 failure condition may also appear if a user tries to program a non-blank location without pre-erase. in this case the device locks out and never completes the embedded algorithm operation. hence, the system never reads valid data on dq 7 bit and dq 6 never stop toggling. once the device has exceeded timing limits, the dq 5 bit will indicate a ?1.? please note that this is not a devi ce failure condition since the device was incorrectly used. if this occurs, reset device with the command sequence.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 34 dq 3 sector erase timer after completion of the initial sector erase command sequence, sector erase time-out begins. dq 3 will remain low until the time-out is completed. data polling and toggle bit are valid af ter the initial sector erase command sequence. if data polling or the toggle bit i indicates that a valid erase command has been written, dq 3 may be used to determine whether the se ctor erase timer windo w is still open. if dq 3 is high (?1?) the internally controlled erase cycle has begun. if dq 3 is low (?0?) , the device will accept additi onal sector erase commands. to insure the command has been accepted, the system software should check the status of dq 3 prior to and following each subsequent sector erase command. if dq 3 were high on the second status check, the command may not have been accepted. see ?hardware sequence flags table? dq 2 toggle bit ii this toggle bit ii, along with dq 6 , can be used to determine whether the device is in the embedded erase algorithm or in erase suspend. successive reads from the erasing sector will cause dq 2 to toggle during the embedded erase algorithm. if the device is in the erase-suspended- read mode, successive re ads from the erase-su spended sector will cause dq 2 to toggle. when the device is in the erase-suspended-program mode, successive reads from the non-erase suspended sector will indica te a logic ?1? at the dq 2 bit. dq 6 is different from dq 2 in that dq 6 toggles only when the standard program or erase, or erase suspend program operation is in progress. the behavior of these two status bits, along with that of dq 7 , is summarized as follows : for example, dq 2 and dq 6 can be used together to determine if the erase-suspend-read mode is in progress. (dq 2 toggles while dq 6 does not.) see also ?toggle bit status table?. furthermore dq 2 can also be used to determine which sector is being erased. at the erase mode, dq 2 toggles if this bit is read from an erasing sector. to operate toggle bit function properly, ce or oe must be high when bank address is changed. reading toggle bits dq 6 /dq 2 whenever the system initially begins reading toggle bit status, it must read dq 7 to dq 0 at least twice in a row to determine whether a toggle bit is toggling. typically a system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device ha s completed the program or er ase operation. the system can read array data on dq 7 to dq 0 on the following read cycle. however, if, after the initial two read cycles, the system determines that t he toggle bit is still toggling, the system also should note whether the value of dq 5 is high (see the section on dq 5 ) . if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as dq 5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not comp lete the operation successfully , and the system must write the reset command to return to reading array data. the remaining scenario is that the system initially determines that the toggle bit is toggling and dq 5 has not gone high. the system may continue to monitor the toggle bit and dq 5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. (refer to ?(5) toggle bit algorithm? in flow chart.)
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 35 *: successive reads from the erasing or erase-suspend sector will cause dq 2 to toggle. reading from non-erase suspend sector address will in dicate logic ?1? at the dq 2 bit. rdy: ready the rdy is a dedicated output that, by default, indicates (when at logic low) the system should wait 1 clock cycle before expecting the next word of data. using the rdy configuration command sequence, rdy can be set so that a logic low indicates the sy stem should wait 2 clock cycles before expecting valid data. rdy functions only while reading data in burst mode. the following condition causes the rdy output to be low: during the initial access (in burst mode). data protection the device is designed to offer protection against accide ntal erasure or programming caused by spurious system level signals that may exist during power transitions. during power up device automatically resets internal state machine to read mode. also, with its control register architecture, alteration of memory contents only occurs after successful completion of specific multi-bus cycle command sequence. device also incorporates several features to prevent inadvertent write cycles resulting from v cc power-up and power-down transitions or system noise. write pulse "glitch" protection noise pulses of less than 3 ns (typical) on oe , ce , or we will not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe = v il , ce = v ih or we = v ih . to initiate a write cycle, ce and we must be a logical zero while oe is a logical one. power-up write inhibit power-up of the device with we = ce = v il and oe = v ih will not accept commands on the rising edge of we . the internal state machine is automatically reset to read mode on power-up. toggle bit status table mode dq 7 dq 6 dq 2 program dq 7 toggle 1 erase 0 toggle toggle * erase-suspend read (erase-suspended sector) 11toggle erase-suspend program dq 7 toggle 1 *
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 36 absolute maximum ratings *1: minimum dc voltage on input or l/o pins are ?0.5 v. during voltage transitions, inputs may underrshoot v ss to ?2.0 v for periods of up to 20 ns. maximum dc voltage on input and l/o pins are v cc +0.5 v. during voltage transitions, outputs may overshoot to v cc +2.0 v for periods of up to 20 ns. *2: minimum dc input voltage on acc pin is ?0.5 v. during voltage transitions, acc pin may undershoot v ss to ?2.0 v for periods of up to 20 ns. maximum dc input voltage on acc pin is +10.5 v which may overshoot to +12.5 v for periods of up to 20 ns. voltage difference between input voltage and supply voltage (v in - v cc ) do not exceed 9 v. warning: semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. do not exceed these ratings. recommended operating conditions note: operating ranges define those limits between which the functionality of the device is quaranteed. warning: the recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. all of the device?s electric al characteristics are warranted when the device is operated within these ranges. always use semiconductor devices within their recommended operating condition ranges. operation outside these ranges may advers ely affect reliability and coul d result in device failure. no warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. users considering application outside the listed conditions are advised to contact their fujitsu representatives beforehand. parameter symbol rating unit min max storage temperature tstg ?55 +125 c ambient temperature with power applied t a ?40 +85 c voltage with respect to ground all inputs and i/os pins except as noted below * 1 v in , v out ?0.5 v ccq +0.5 v power supply voltage * 1 v cc ?0.5 +2.5 v i/o?s power supply voltage v ccq ?0.5 +3.5 v acc * 2 v acc ?0.5 +10.5 v parameter symbol part no. value unit min max ambient temperature t a mbm29bs/bt64lf 18/25 ?40 +85 c power supply voltage v cc mbm29bs/bt64lf 18/25 +1.65 +1.95 v v ccq supply voltage v ccq mbm29bs64lf 18/25 +1.65 vcc v mbm29bt64lf 18/25 +2.70 +3.15 v
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 37 maximum overshoot/ma ximum undershoot figure 1 maximum undershoot waveform +0.8 v ?0.5 v 20 ns ?2.0 v 20 ns 20 ns figure 2 maximum overshoot waveform +1.0 v v cc +0.5 v 20 ns v cc +2.0 v 20 ns 20 ns
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 38 dc characteristics *1: the l cc current listed includes both the dc operating current and the frequency dependent component. *2: l cc active while embedded algorithm (program or erase) is in progress. *3: automatic sleep mode enables the low power mode when address remain stable for t acc + 60 ns. *4: embedded algorithm (program or erase) is in progress.(@5 mhz) *5: applicable for only vcc. parameter description symbol conditions value unit min typ max input leakage current i li v in = v ss to v cc , v cc = v cc max ? ? 1.0 a output leakage current i lo v out = v ss to v cc , v cc = v cc max ? ? 1.0 a v cc active burst read current i ccb ce = v il , oe = v ih , we =v ih (54 mhz) ??25ma v cc active asynchronous read current* 1 i cc1 ce = v il , oe = v ih , we = v ih 5 mhz ? 812 ma 1 mhz 3.3 5 v cc active current* 2 i cc2 ce = v il , oe = v ih , v pp = v ih ?1540ma v cc current (standby) i cc3 ce = reset = v cc 0.2 v, v in 0.2 v v ccq = 1.8 v ? 0.2 10 a v ccq = 3.0 v ? 0.2 10 a v cc current (standby, reset)* 3 i cc4 reset = v il , clk = v il v ccq = 1.8 v ? 0.2 10 a v ccq = 3.0 v ? 0.2 10 a v cc current (automatic sleep mode)* 3 i cc5 vcc=vcc max, ce = v ssq 0.2 v, reset = v ccq 0.2 v, v in = v ccq 0.2 v or v ssq 0.2 v v ccq = 1.8 v ? 0.2 10 a v ccq = 3.0 v ? 0.2 10 a v cc active current (read-while-program )* 4 i cc6 ce = v il , oe = v ih ?2560ma v cc active current (read-while-erase )* 4 i cc7 ce = v il , oe = v ih ?2560ma input low level v il ? v ccq = 1.8 v ?0.5 ? 0.2 v v ccq = 3.0 v ?0.5 ? 0.4 v input high level v ih ? v ccq = 1.8 v v ccq ?0.2 ? v ccq +0.2 v v ccq = 3.0 v v ccq ?0.4 ? v ccq +0.4 v output low voltage level v ol i ol = 100 a, v cc = v cc min = v ccq ??0.1v output high voltage level v oh i oh = ?100 a, v cc = v cc min = v ccq v ccq ?0.1 ? ? v voltage for acc program acceleration* 5 v acc ? 8.5 ? 9.5 v
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 39 ac characteristics synchronous/burst read *: addresses are latched on the first of either the active edge of clk or the rising edge of avd . note: test conditions: output load: v ccq = 1.65 v to 1.95 v :30 pf (mbm29bs64lf) v ccq = 2.7 v to 3.15 v : 30 pf (mbm29bt64lf) input rise and fall times: 5 ns input pulse levels: 0.0 v to v ccq timing measurement reference level input: 0.5 v ccq output: 0.5 v ccq parameter symbol bs64lf bt64lf unit -25 (40 mhz) -18 (54 mhz) -25 (40 mhz) -18 (54 mhz) jedec standard minmaxminmaxminmaxminmax latency ? t iacc ? 120 ? 106 ? 120 ? 106.5 ns burst access time valid clock to output delay ?t bacc ? 20 ? 13.5 ? 20 ? 14 ns avd setup time to clk ? t avds 5 ? 5 ? 5 ? 5 ? ns address setup time to clk * ? t acs 5 ? 5 ? 5 ? 5 ? ns address hold time from clk * ? t ach 7 ? 7 ? 7 ? 7 ? ns data hold time from next clock cycle ?t bdh ? 4 ? 4 ? 4 ? 4ns output enable to output valid ? t oe ? 20 ? 13.5 ? 20 ? 14 ns chip enable to high-z ? t cez ? 10 ? 10 ? 10.5 ? 10.5 ns output enable to high-z ? t oez ? 10 ? 10 ? 10.5 ? 10.5 ns ce setup time to clk ? t ces 5 ? 5 ? 5 ? 5 ? ns rdy setup time to clk ? t rdys 5 ? 5 ? 4.5 ? 4.5 ? ns ready access time from clk ? t racc ? 20 ? 13.5 ? 20 ? 14 ns address setup time to avd *?t aas 5 ? 5 ? 5 ? 5 ? ns address hold time to avd *?t aah 7 ? 7 ? 7 ? 7 ? ns ce setup time to avd ?t cas 0 ? 0 ? 0 ? 0 ? ns avd low to clk ? t avc 5 ? 5 ? 5 ? 5 ? ns avd pulse ? t avd 12 ? 12 ? 12 ? 12 ? ns access time ? t acc ? 70 ? 70 ? 70 ? 70 ns
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 40 asynchronous read *1: asynchronous access time is fr om the last of either stable ad dresses or the falling edge of avd . *2: addresses are latched on the rising edge of avd or address change timing. hardware reset (reset ) parameter symbol bs64lf bt64lf unit jedec standard min max min max access time from ce low ? t ce ? 70 ? 70 ns asynchronous access time * 1 ?t acc ? 70 ? 70 ns avd low time ? t avdp 12 ? 12 ? ns address setup time to rising edge of avd ? t aavds 5 ? 5 ? ns address hold time from rising edge of avd ? t aavdh 7 ? 7 ? ns output enable to output valid ? t oe ? 20 ? 20.5 ns output enable hold time read ?t oeh 0 ? 0 ? ns toggle and data polling 10 ? 10 ? ns output enable to high-z * 2 ?t oez ? 10 ? 10.5 ns ce setup time to avd ?t cas 0 ? 0 ? ns parameter symbol all speed options unit jedec standard min max reset pin low (during embedded algorithms) to read mode ?t ready ? 20 s reset pulse width ? t rp 500 ? ns reset high time before read ? t rh 200 ? ns power on/off time ? t ps 0 ? ns
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 41 write (erase/program) operations *1: in program 1 timing, addresses are latched on the falling edge of we . in program 2 timing, addresses are latched on the first of either the rising edge of avd or the active edge of clk. *2: see the "erase and programming performance" section for more information. *3: does not include the preprogramming time. parameter symbol all speed options unit jedec standard min typ write cycle time t avav t wc 80 ? ns address setup time * 1 program 1(we or clk) t avwl t as 0 ? ns program 2(avd or clk) 5 ? address hold time * 1 program 1(we or clk) t wlax t ah 45 ? ns program 2(avd or clk) 7 ? avd low time ? t avdp 12 ? ns data setup time t dvwh t ds 45 ? ns data hold time t whdx t dh 0 ? ns read recovery time before write t ghwl t ghwl 0 ? ns ce setup time to avd ?t cas 0 ? ns ce hold time t wheh t ch 0 ? ns write pulse width t ehwh t wp 50 ? ns write pulse width high t whwl t wph 30 ? ns latency between read and write operations ? t sr/w 0 ? ns programming operation * 2 t whwh1 t whwh1 ? 8s accelerated programming operation * 2 t whwh1 t whwh1 ? 2.5 s sector erase operation * 2, * 3 t whwh2 t whwh2 ? 0.5 s chip erase operation * 2, * 3 ? 35.0 v acc rise and fall time ? t vid 500 ? ns v acc setup time (during accelerated programming) ?t vids 1 ? s v cc setup time ? t vcs 50 ? s ce setup time to we t elwl t cs 0 ? ns avd setup time to we ?t asw 5 ? ns avd hold time to we ?t ahw 5 ? ns address setup time to clk * 1 ?t acs 5 ? ns address hold time to clk * 1 ?t ach 7 ? ns avd hold time to clk ? t avch 5 ? ns we low to clk ? t wlc 0 ? ns clk to we low ? t cwl 5 ? ns
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 42 erase and programm ing performance note : test conditions t a = + 25c, typical erase conditions t a = + 25c, v cc = 1.8 v typical program conditions t a = + 25c, v cc = 1.8 v, data = checker fbga pin capacitance note : test conditions t a = + 25c, f = 1.0 mhz parameter limit unit note min typ max sector erase time ? 0.5 2.0 s excludes programming prior to erasure word programming time ? 6 100 s excludes system level overhead chip programming time ? 25.2 95 s excludes system level overhead erase/program cycle 100,000 cycle ? parameter symbol test setup typ max unit input capacitance c in v in = 0 tbd tbd pf output capacitance c out v out = 0 tbd tbd pf control pin capacitance c in2 v in = 0 tbd tbd pf
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 43 timing diagrams key to switching wavwforms (1) synchronous burst mode read (latched by rising active clk) waveform inputs outputs steady changing from h to l changing from l to h don?t care, any change permitted changing, state unknown does not apply center line is high impedance state (high-z) da da + 1 da + n oe dq 15 to dq 0 a 21 to a 0 aa avd rdy clk ce t ces t acs t avds t avd t ach t oe t racc t oez t cez t iacc t acc t bdh 7 cycles for initial access shown. high-z high-z high-z 12 34567 t rdys t bacc notes: ? figure shows total number of wait states set to seven cycles. the total number of wait states can be programmed from two cycles to seven cycles. ? the device is in synchronous mode.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 44 (2) synchronous burst mode read (latched by falling active clk) (3) synchronous burst mode read(latched by avd active edge) notes: ? figure shows total number of wait states set to four cycles. the total number of wait states can be programmed from two cycles to seven cycles. clock is set for active falling edge. ? the device is in synchronous mode. da da + 1 da + n oe dq 15 to dq 0 a 21 to a 0 aa avd rd y clk ce t ces t acs t avds t avd t ach t oe t oez t cez t iacc t acc t bdh 4 cycles for initial access shown. t racc high-z high-z high-z 12345 t rdys t bacc da da + 1 da + n oe dq 15 to dq 0 a 21 to a 0 aa avd rdy clk ce t cas t aas t avc t avd t aah t oe t racc t oez t cez t iacc t bdh 7 cycles for initial access shown. high-z high-z high-z 1 234567 t rdys t bacc t acc notes: ? figure shows total number of wait states se t to seven cycles. the total number of wait states can be programmed from two cycles to seven cycles. clock is set for active rising edge. ? the device is in synchronous mode.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 45 (4) 8-word linear burst with wrap around (5) burst with rdy set one cycle before data d6 d7 oe dq 15 to dq 0 a 21 to a 0 aa avd rdy clk ce t ces t acs t avds t avd t ach t oe t iacc t bdh d0 d1 d5 d6 7 cycles for initial access shown. 18.5 ns typ (54 mhz) high-z t racc 1 2 34567 t rdys t bacc t acc note: figure assumes 7 wait states for initial access, 54 mhz clock, synchronous read. d 0 to d 7 in data waveform indicate the order of data within a given 8-word address range, from lowest to highest. starting address in figure is the 7th address in range (a 6 ). see ?requirements for synchronous (burst) read operation?. the set configuration register command se- quence has been written with a 18 = 1; device will output rdy with valid data. d1 d0 d2 d3 da + n oe dq 15 to dq 0 a 21 to a 0 aa avd rdy clk ce t ces t acs t avds t avd t ach t oe t racc t oez t cez t iacc t bdh 6 wait cycles for initial access shown. 25 ns typ (40 mhz) high-z high-z high-z 12 3456 t rdys t bacc t acc note: figure assumes 6 wait states for initial access, 40 mhz clock, and synchronous read. the set configuration register command sequence has been written with a 18 = 0; device will output rdy one cycle before valid data.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 46 (6) asynchronous mode read with avd latched (7) asynchronous mode read with avd stable low t ce we a 21 to a 0 ce oe valid rd t acc t oeh t oe dq 15 to dq 0 t oez t aavdh t avdp t aavds avd ra t cas note: ra = read address, rd = read data. t ce we a 21 to a 0 ce oe valid rd t acc t oeh t oe dq 15 to dq 0 t oez avd ra t cas note: ra = read address, rd = read data.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 47 (8) reset timings (9) power on/off timings reset t rp reset timings not during embedded algorithms t ready ce, oe t rh ce, oe reset timings during embedded algorithms reset t rp reset data address valid data out t ps t ps v cc valid data in vcc min 1.65 v t rh t acc 0 v 1.65 v
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 48 (10) programming operation timings (we latched address at clk=v il ) (program1 we ) oe ce data address avd we clk v cc 555h pd t as t asw t ahw t ah t wc t wph pa t vcs t wp t dh t ch in progress t whwh1 va complete va program command sequence (last two cycles) read status data t ds v il t avdp a0h t cs notes: ? pa = program address, pd = program data, va = valid address for reading status bits. ? ?in progress? and ?complete? refer to status of program operation. ? a 21 to a 12 are don?t care during command sequence unlock cycles. ? clk must be fixed at v il (don?t be fixed at v ih ). ? either ce or avd is required to go from low to high in between programming command sequences. ? the programming operation is independent of the set device read mode bit in the burst mode configuration register.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 49 (11) programming operation timings (avd latched address at clk=v il ) (program1 avd ) notes: ? pa = program address, pd = program data, va = valid address for reading status bits. ? ?in progress? and ?complete? refer to status of program operation. ? a 21 to a 12 are don?t care during command sequence unlock cycles. ? clk must be fixed at v il (don?t be fixed at v ih ). ? either ce or avd is required to go from low to high in between programming command sequences. ? the programming operation is independent of the set device read mode bit in the burst mode configuration register. oe ce data address avd we clk v cc 555h pd t as t ah t wc t wph pa t vcs t wp t dh t ch in progress t whwh1 va complete va program command sequence (last two cycles) read status data t ds v il t avdp a0h t cs
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 50 (12) programming operation timings (we or clk latched address) (program1 we or clk ) oe ce data address avd we clk v cc 555h pd t wp t wc t wph pa t vcs t dh t ch in progress t whwh1 va complete va program command sequence (last two cycles) read status data t ds t avdp a0h t wlc t acs t cas t ach t avch notes: ? pa = program address, pd = program data, va = valid address for reading status bits. ? ?in progress? and ?complete? refer to status of program operation. ? a 21 to a 12 are don?t care during command sequence unlock cycles. ? addresses are latched on the first of either the rising edge of we or the active edge of clk. if clk active edge will not appear until we falling edge, program timing become programming operation (we latched address). ? either cs or avd is required to go from low to high inbetween programming command sequences. ? the programming operation is independent of the set device read mode bit in the burst mode configuration register.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 51 (13) programming operation timings (avd or clk latched address) (program2 avd or clk) notes: ? pa = program address, pd = program data, va = valid address for reading status bits. ? ?in progress? and ?complete? refer to status of program operation. ? a 21 to a 12 are don?t care during command sequence unlock cycles. ? addresses are latched on the first of either the rising edge of avd or the active edge of clk. if clk active edge will appear while avd =v il , program timing become program operation (clk latched address). ? either cs or avd is required to go from low to high inbetween programming command sequences. ? the program operation is independent of the set device read mode bit in the burst mode configuration register. oe ce data address avd we clk 555h pd t wp t wc t wph pa t as t dh t ch in progress t whwh1 va complete va program command sequence (last two cycles) read status data t ds t avdp a0h t cwl t avch t ah t vcs vcc t cas
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 52 (14) chip/sector erase command sequence oe ce data address avd we clk v cc t as t wp t ah t wc t wph sa t vcs t cs t dh t ch in progress t whwh2 va complete va erase command sequence (last two cycles) read status data t ds 10h for chip erase 555h for chip erase v ih v il t avdp 55h 2aah 10h/30h notes: ? sa is the sector address for sector erase. ? address bits a 21 to a 12 are don?t cares during unlock cycles in the command sequence.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 53 (15) accelerated fast mode programming timing (16) data polling timings (during embedded algorithm) ce avd we address data oe acc don't care don't care a0h don't care pa pd v id 1 s v il or v ih t vid t vids note: use setup and hold times from conventional program operation. we ce oe t oe address avd t oeh t ce t ch t oez t cez status data status data t acc va va notes: ? status reads in figure are shown as asynchronous. ? va = valid address. two read cycles are required to determine status. when the embedded algorithm operation is complete, and data polling will output true data.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 54 (17) toggle bit timings (during embedded algorithm) (18) synchronous read data polling timings/toggle bit timings we ce oe t oe address avd t oeh t ce t ch t oez t cez status data status data t acc va va notes: ? status reads in figure are shown as asynchronous. ? va = valid address. two read cycles are required to determine status. when the embedded algorithm operatio n is complete, the togg le bits will stop toggling. ce clk avd address oe data rdy status data status data va va t iacc t iacc notes: ? the timings are similar to synchronous read timings. ? va = valid address. two read cycles are required to determine status. when the embedded algorithm operatio n is complete, the togg le bits will stop toggling. ? rdy is active with data (a 18 = 1in the burst mode configuration register). when a 18 = 0 in the burst mode configuration register, rdy is active one clock cycle before data.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 55 (19) example of wait states insertion data avd oe clk 12345 d0 d1 67 total number of clock cycles following avd falling edge rising edge of next clock cycle following last wait state triggers next burst data wait state decoding addresses: a 14 , a 13 , a 12 = "101" ? 7 cycles a 14 , a 13 , a 12 = "100" ? 6 cycles a 14 , a 13 , a 12 = "011" ? 5 cycles a 14 , a 13 , a 12 = "010" ? 4 cyclesl a 14 , a 13 , a 12 = "001" ? 3 cycles a 14 , a 13 , a 12 = "000" ? 2 cycles note: figure assumes address d0 is not at an address boundary, active clock edge is rising, and wait state is set to ?101?.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 56 (20) bank-to-bank read /write cycle timings oe ce we t oeh data address avd pd/30h aah ra pa/sa t wc t ds t dh t rc t rc t oe t as t ah t acc t oeh t wp t ghwl t oez t wc t sr/w last cycle in program or sector erase command sequence read status (at least two cycles) in same bank and/or array data from other bank begin another write or program command sequence rd ra 555h rd t wph note: break points in waveforms indicate that system may alternately read array data from the ?non-busy bank? while checking the status of the program or erase operation in the ?busy? bank. the system should read status twice to ensure valid information.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 57 flow chart (1) synchronous/asynchronous state diagram (read mode) power-up/ hardware reset asynchronous read mode only synchronous read mode only set burst mode configuration register command for synchronous mode (a 19 = 0) set burst mode configuration register command for asynchronous mode (a 19 = 1)
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 58 (2) embedded program tm algorithm no yes start program command sequence (address/command): 555h/aah 2aah/55h 555h/a0h write program command sequence (see below) data polling device increment address verify data ? program address/program data programming completed last address ? yes no embedded algorithm embedded program algorithm in progress
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 59 (3) embedded erase tm algorithm 555h/aah 2aah/55h 555h/aah 555h/80h 555h/10h 2aah/55h 555h/aah 2aah/55h 555h/aah 555h/80h 2aah/55h additional sector erase commands are optional. write erase command sequence (see below) data polling or toggle bit from device erasure completed chip erase command sequence (address/command): individual sector/multiple sector erase command sequence (address/command): sector address/30h sector address/30h sector address/30h start data = ffh no yes ? embedded algorithm embedded erase algorithm in progress notes: ? see ?mbm29bs/bt64lf command definitions table? in device bus operations for erase command sequence. ? see the section on dq 3 for information on the sector erase timer.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 60 (4) data polling algorithm *: dq 7 is rechecked even if dq 5 = ?1? because dq 7 may change simultaneously with dq 5 . va = address for programming = any of the sector addresses within the sector being erased during sector erase or multiple erases operation. = any of the sector addresses within the sector not being protected during sector erase or multiple sector erases operation. fail dq 7 = data? no no dq 7 = data? dq 5 = 1? pass yes yes no start read byte (dq 7 to dq 0 ) addr. = va read byte (dq 7 to dq 0 ) addr. = va yes *
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 61 (5) toggle bit algorithm toggle bit = toggle? yes no toggle bit = toggle? dq 5 = 1? yes no no yes read (dq 7 to dq 0 ) addr. = va read (dq 7 to dq 0 ) addr. = va read (dq 7 to dq 0 ) addr. = va start *1 *1, *2 program/erase operation not complete, write reset command program/erase operation complete read (dq 7 to dq 0 ) addr. = va *1, *2 va = bank address being executed embeded algorithm. *1 : read toggle bit twice to determine whether or not it is toggling. *2 : recheck toggle bit because it may stop toggling as dq 5 changes to ?1?.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 62 (6) embedded programming algorithm for fast mode yes no 555h/aah verify data? start fast mode algorithm 555h/20h 2aah/55h xxxxh/a0h program address/program data data polling device last address ? programming completed xxxxh/90h xxxxh/f0h increment address yes no set fast mode in fast program reset fast mode
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 63 ordering information part no. package access time(ns) remarks mbm29bs64lf18pbt mbm29bs64lf25pbt 60-pin plastic fbga (bga-60p-m05) 54 40 mbm29bt64lf18pbt mbm29bt64lf25pbt 54 40 mbm29bs/bt64 l f xx xxx device number/description mbm29bs64 64 mega-bit (4m 16-bit) burst mode flash memory 1.8 v-only read, write, and erase with 1.8v v ccq mbm29bt64 64 mega-bit (4m 16-bit) cmos burst mode flash memory 1.8 v-only read, write, and erase with 3.0 v v ccq package type pbt= 60-ball fine pitch ball grid array package (fbga) speed option see product selector guide 18=54mhz, 25=40mhz device revision sector protection l = lower sector address
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 64 package dimensions c 2003 fujitsu limited b60005s-c-1-1 9.00 0.10(.354 .004) .043 ? .005 +.005 ? 0.13 +0.12 1.08 (mounting height) 0.38 0.10 (.015 .004) (stand off) 1 2 3 4 5 6 7 8 a b c d e f g h a 0.40(.016) ref 0.80(.031) ref b 0.10(.004) (.315 .004) 8.00 0.10 s 0.08(.003) m s a b (60- ? .018 .002) 60- ? 0.45 0.05 (index area) (index area) 60-ball plastic fbga (bga-60p-m05) dimensions in mm (inches) . note : the values in parentheses are reference values.
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 65 memo
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 66 memo
retired product y ds05-20916-2e_august 2, 2007 mbm29bs/bt64lf -18/25 67 revision history revision ds05-20916-2e august 2, 2007 the following comment is added. this product has been retired and is not reco mmended for new designs. availability of this document is retained for reference and historical purposes only.
mbm29bs/bt64lf -18/25 retired product y ds05-20916-2e_august 2, 2007 fujitsu limited for further information please contact: japan fujitsu limited marketing division electronic devices shinjuku dai-ichi seimei bldg. 7-1, nishishinjuku 2-chome, shinjuku-ku, tokyo 163-0721, japan tel: +81-3-5322-3353 fax: +81-3-5322-3386 http://edevice.fujitsu.com/ north and south america fujitsu microelectronics america, inc. 1250 e. arques avenue, m/s 333 sunnyvale, ca 94088-3470, u.s.a. tel: +1-408-737-5600 fax: +1-408-737-5999 http://www.fma.fujitsu.com/ europe fujitsu microelectronics europe gmbh am siebenstein 6-10, d-63303 dreieich-buchschlag, germany tel: +49-6103-690-0 fax: +49-6103-690-122 http://www.fme.fujitsu.com/ asia pacific fujitsu microelectronics asia pte ltd. #05-08, 151 lorong chuan, new tech park, singapore 556741 tel: +65-6281-0770 fax: +65-6281-0220 http://www.fmal.fujitsu.com/ korea fujitsu microelectronics korea ltd. 1702 kosmo tower, 1002 daechi-dong, kangnam-gu,seoul 135-280 korea tel: +82-2-3484-7100 fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ f0403 ? fujitsu limited printed in japan all rights reserved. the contents of this document are subject to change without notice. customers are advised to c onsult with fujitsu sales representatives before ordering. the information, such as descrip tions of function and application circuit examples, in this document are presented solely for the purpose of reference to show exam ples of operations and uses of fujitsu semiconductor device; fujitsu does not warrant proper operation of the device with respect to use based on such information. when you devel op equipment incorporating the device based on such inform ation, you must assume any responsibility arising out of such use of the information. fujitsu assumes no liability for any dama ges whatsoever arising out of the use of the information. any information in this documen t, including descriptions of function and schematic diagrams, sh all not be construed as license of the use or exercise of any intellectual propert y right, such as patent right or copyright, or any ot her right of fujitsu or any third party or does fujitsu warrant non-in fringement of any third-party?s intellectual property right or ot her right by using such information. fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. the products described in this document are designed, developed and manufactured as c ontemplated for gene ral use, including without limitation, ordinary industrial us e, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extrem ely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or othe r loss (i.e., nuclear reaction control in nuclear facility, ai rcraft flight cont rol, air traffic control, mass transpor t control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., su bmersible repeater and artificial satellite). please note that fujitsu will not be liab le against you and/or any third party for any claims or da mages arising in connection with above-mentioned uses of the products. any semiconductor devices have an inherent chance of failure. you must protect against injury, dama ge or loss from such failures by incorporating safety design meas ures into your facility and equipment such as redundancy, fi re protection, and prevention of over-current levels and othe r abnormal operating conditions. if any products described in th is document repr esent goods or technologies subject to certain restrictions on export under the foreign exchange and foreign trade law of japan, the prior authorization by japane se government will be required for export of those products from japan.

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